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Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Symbol
V PN
V PN(Surge)
V CES
± I C
± I CP
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Conditions
Applied between P - N U , N V , N W
Applied between P - N U , N V , N W
T C = 25°C, T J ?? 150°C
T C = 25°C, T J ?? 150°C, Under 1 ms Pulse
Rating
450
500
600
5
10
Unit
V
V
V
A
A
Width
P C
T J
Collector Dissipation
Operating Junction Temperature
T C = 25°C per Chip
(2nd Note 1)
19
- 40 ~ 150
W
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM ? 3 product is 150 ? C (at T C ? 125 ? C).
Control Part
Symbol
V CC
V BS
Parameter
Control Supply Voltage
High-Side Control Bias Voltage
Conditions
Applied between V CC(H) , V CC(L) - COM
Applied between V B(U) - V S(U) , V B(V) - V S(V) ,
Rating
20
20
Unit
V
V
V B(W) - V S(W)
V IN
Input Signal Voltage
Applied between IN (UH) , IN (VH) , IN (WH) ,
-0.3 ~ V CC + 0.3
V
IN (UL) , IN (VL) , IN (WL) - COM
V FO
I FO
V SC
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
Applied between V FO - COM
Sink Current at V FO pin
Applied between C SC - COM
-0.3 ~ V CC + 0.3
5
-0.3 ~ V CC + 0.3
V
mA
V
Bootstrap Diode Part
Symbol
V RRM
I F
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Conditions
T C = 25°C, T J ?? 150°C
Rating
600
0.5
Unit
V
A
I FP
Forward Current (Peak)
T C = 25°C, T J ?? 150°C
Under 1 ms Pulse
2.0
A
Width
T J
Operating Junction Temperature
-40 ~ 150
°C
Total System
Symbol
V PN(PROT)
T C
T STG
V ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V CC = V BS = 13.5 ~ 16.5 V
T J = 150°C, Non-Repetitive, < 2 ? s
-40 ? C ??? T J ? 150 ? C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
R th(j-c)Q
R th(j-c)F
Junction to Case Thermal Resistance
Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
-
-
-
-
6.3
6.5
°C / W
°C / W
2nd Notes:
2. For the measurement point of case temperature (T C ), please refer to Figure 2.
?2007 Fairchild Semiconductor Corporation
FSBF5CH60B Rev. C3
5
www.fairchildsemi.com
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